Mode locking in monolithic two-section InGaN blue-violet semiconductor lasers

dc.contributor.authorVasil'ev, Peter P.
dc.contributor.authorSergeev, A. B.
dc.contributor.authorSmetanin, Igor V.
dc.contributor.authorWeig, Thomas
dc.contributor.authorSchwarz, Ulrich T.
dc.contributor.authorSulmoni, Luca
dc.contributor.authorDorsaz, Julien
dc.contributor.authorLamy, Jean-Michel
dc.contributor.authorCarlin, Jean-François
dc.contributor.authorGrandjean, Nicolas
dc.contributor.authorZeng, Xi
dc.contributor.authorStadelmann, Thomas
dc.contributor.authorGrossmann, Sylvain
dc.contributor.authorHoogerwerf, Arno C.
dc.contributor.authorBoiko, Dmitri L.
dc.date.accessioned2022-02-14T17:07:56Z
dc.date.available2022-02-14T17:07:56Z
dc.date.issued2013-03-25
dc.description.abstractPassive mode-locked pulses with repetition frequencies in the range 40 to 90?GHz were observed in blue-violet GaN-based quantum-well lasers without external cavities. The lasers had two-section geometry with built-in saturable absorber section. The individual pulses had durations as short as 3–5 ps at peak powers of around 320 mW.
dc.identifier.citationApplied Physics Letters, vol. 102 (12), pp. 121115
dc.identifier.doi10.1063/1.4798264
dc.identifier.issn0003-6951
dc.identifier.urihttps://hdl.handle.net/20.500.12839/791
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.4798264
dc.titleMode locking in monolithic two-section InGaN blue-violet semiconductor lasers
dc.typeJournal Article
dc.type.csemdivisionsDiv-E
dc.type.csemresearchareasPhotonics
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