Solitary pulse-on-demand production by optical injection locking of passively Q-switched InGaN diode laser near lasing threshold

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dc.contributor.authorZeng, Xi
dc.contributor.authorSulmoni, Luca
dc.contributor.authorLamy, Jean-Michel
dc.contributor.authorStadelmann, Thomas
dc.contributor.authorGrossmann, Sylvain
dc.contributor.authorHoogerwerf, Arno C.
dc.contributor.authorGrandjean, Nicolas
dc.contributor.authorBoiko, Dmitri L.
dc.date.accessioned2022-02-14T17:07:59Z
dc.date.available2022-02-14T17:07:59Z
dc.date.issued2015-02-16
dc.description.abstractIn this letter, we investigate the behavior of a Q-switched InGaN multi-section laser diode (MSLD) under optical injection from a continuous wave external cavity diode laser. We obtain solitary optical pulse generation when the slave MSLD is driven near free running threshold, and the peak output power is significantly enhanced with respect to free running configuration. When the slave laser is driven well above threshold, optical injection reduces the peak power. Using standard semiconductor laser rate equation model, we find that both power enhancement and suppression effects are the result of partial bleaching of the saturable absorber by externally injected photons.
dc.identifier.citationApplied Physics Letters, vol. 106 (7), pp. 071101
dc.identifier.doi10.1063/1.4907638
dc.identifier.issn0003-6951
dc.identifier.urihttps://hdl.handle.net/20.500.12839/818
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.4907638
dc.titleSolitary pulse-on-demand production by optical injection locking of passively Q-switched InGaN diode laser near lasing threshold
dc.typeJournal Article
dc.type.csemdivisionsDiv-E
dc.type.csemresearchareasPhotonics
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