A Universal Perovskite/C60 Interface Modification via Atomic Layer Deposited Aluminum Oxide for Perovskite Solar Cells and Perovskite–Silicon Tandems

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dc.contributor.authorArtuk, Kerem
dc.contributor.authorTurkay, Deniz
dc.contributor.authorMensi, Mounir D.
dc.contributor.authorSteele, Julian A.
dc.contributor.authorJacobs, Daniel A.
dc.contributor.authorOthman, Mostafa
dc.contributor.authorYu Chin, Xin
dc.contributor.authorMoon, Soo-Jin
dc.contributor.authorTiwari, Ayodhya N.
dc.contributor.authorHessler-Wyser, Aïcha
dc.contributor.authorJeangros, Quentin
dc.contributor.authorBalllif, Christophe
dc.contributor.authorWolff, Christian M.
dc.date.accessioned2024-08-23T11:29:35Z
dc.date.available2024-08-23T11:29:35Z
dc.date.issued2024-05-23
dc.description.abstractThe primary performance limitation in inverted perovskite-based solar cells is the interface between the fullerene-based electron transport layers and the perovskite. Atomic layer deposited thin aluminum oxide (AlOX) interlayers that reduce nonradiative recombination at the perovskite/C60 interface are developed, resulting in >60 millivolts improvement in open-circuit voltage and 1% absolute improvement in power conversion efficiency. Surface-sensitive characterizations indicate the presence of a thin, conformally deposited AlOx layer, functioning as a passivating contact. These interlayers work universally using different lead-halide–based absorbers with different compositions where the 1.55 electron volts bandgap single junction devices reach >23% power conversion efficiency. A reduction of metallic Pb0 is found and the compact layer prevents in- and egress of volatile species, synergistically improving the stability. AlOX-modified wide-bandgap perovskite absorbers as a top cell in a monolithic perovskite–silicon tandem enable a certified power conversion efficiency of 29.9% and open-circuit voltages above 1.92 volts for 1.17 square centimeters device area. © 2024 The Authors. Advanced Materials published by Wiley-VCH GmbH.
dc.identifier.citationAdvanced Materials, Volume 36, Issue 21, Article number 2311745
dc.identifier.doi10.1002/adma.202311745
dc.identifier.issn09359648
dc.identifier.urihttps://hdl.handle.net/20.500.12839/1480
dc.language.isoen
dc.titleA Universal Perovskite/C60 Interface Modification via Atomic Layer Deposited Aluminum Oxide for Perovskite Solar Cells and Perovskite–Silicon Tandems
dc.typeArticle
dc.type.csemdivisionsBU-V
dc.type.csemresearchareasSolar Cells and Module
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