Folded electro-optical modulators operating at CMOS voltage level in a thin-film lithium niobate foundry process

dc.contributor.authorAlberto Della Torre, Florian Dubois, Homa Zarebidaki, Andrea Volpini, Jacopo Leo, Arno Mettraux, Ayman Manzoor, Ivan Prieto, Davide Grassani, Olivier Dubochet, Michel Despont, and Hamed Sattari
dc.date.accessioned2025-10-06T12:26:51Z
dc.date.available2025-10-06T12:26:51Z
dc.date.issued2025
dc.description.abstractIntegrated electro-optical modulators with small footprints and low half-wave voltage are essential for applications requiring high integration density and low power consumption. Modulators based on thin-film lithium niobate technology have been proven to perform excellently, both in terms of low voltage and high bandwidth operation. However, achieving half-wave voltages of ∼1 V, which allows to directly drive the modulator with CMOS circuits, typically requires long structures. Folding the device is a possible approach to achieve a CMOS-compatible voltage level in a compact design. Yet, this method requires meticulous design and advanced manufacturing technology. To achieve large scale deployment of this technology, it is imperative to further develop thin-film lithium niobate photonic integrated circuits manufacturing. Here, we address these requirements and report folded electro-optical modulators, operating at 1550 nm in TE polarization, with half-wave voltage as low as 0.9 V or bandwidths up to beyond 40 GHz in a compact 5 mm × 5 mm chip fabricated in CSEM’s open-access foundry process using standardized process design kit components.
dc.identifier.citationOptics Express Vol. 33, Issue 4, pp. 6747-6757 (2025)
dc.identifier.doihttps://doi.org/10.1364/OE.548003
dc.identifier.urihttps://hdl.handle.net/20.500.12839/1753
dc.titleFolded electro-optical modulators operating at CMOS voltage level in a thin-film lithium niobate foundry process
dc.typeConference / Workshop
dc.type.csemdivisionsBU-T
dc.type.csemresearchareasPhotonics
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